Sub‐Micron thick Step‐Graded AlGaN Buffer on Silicon with a High Buffer Breakdown Field - ANR - Agence nationale de la recherche Accéder directement au contenu
Article Dans Une Revue physica status solidi (a) Année : 2023

Sub‐Micron thick Step‐Graded AlGaN Buffer on Silicon with a High Buffer Breakdown Field

Résumé

We report on a sub-micron thick AlGaN/GaN high electron mobility transistor (HEMT) epilayers grown on silicon substrate with a state-of-the art vertical buffer breakdown field as high as 6 MV/cm enabling a high transistor breakdown voltage of 250 V for short gate to drain distances despite such a thin structure. HEMTs with a gate length of 100 nm exhibit good DC characteristics with a low drain-induced barrier lowering as low as 100 mV/V for a VDS of 30 V. Breakdown voltages of each epilayer from the decomposed heterostructure reveals that the outstanding breakdown strength is attributed to the insertion of Al-rich AlGaN in the buffer layers combined with an optimized AlN nucleation layer. As a result, large signal measurements at 10 GHz could be reliably achieved up to VDS = 35 V despite the use of a 100 nm gate length. These results demonstrate the potential of sub-micron thick buffer GaN-on-Si heterostructures for high frequency applications.
Fichier principal
Vignette du fichier
Physica Statu2023 - Carneiro - Sub‐Micron thick Step‐Graded AlGaN Buffer on Silicon with a High Buffer.pdf (851.92 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-04042888 , version 1 (23-03-2023)

Identifiants

Citer

Elodie Carneiro, Stéphanie Rennesson, Sebastian Tamariz, Kathia Harrouche, Fabrice Semond, et al.. Sub‐Micron thick Step‐Graded AlGaN Buffer on Silicon with a High Buffer Breakdown Field. physica status solidi (a), 2023, 220 (16), pp.2200846. ⟨10.1002/pssa.202200846⟩. ⟨hal-04042888⟩
57 Consultations
36 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More