Article Dans Une Revue Applied Surface Science Année : 2025

In situ determination of indium/gallium composition in InxGa1-x nanodroplets on GaAs(111)A based on the complementarity between XPS and REELS

G. Monier
Luc Bideux
Christine Robert-Goumet

Résumé

This work provides a new tool based on the complementarity between X-ray Photoelectron Spectroscopy (XPS) and Reflection Electron Energy Loss Spectroscopy (REELS). More precisely, this study is focused on the in situ precise determination of indium and gallium composition of self-assembled InxGa1-x nanodroplets on GaAs(111)A substrate during the first stage of III-V quantum dots growth by droplet epitaxy. An XPS intensity model based on In4d and Ga3d core levels enables the estimation of the gallium/indium ratio within the droplets under the assumption of a homogeneous droplet. On the other hand, we develop a brand new decomposition methodology of loss probabilities curves obtained from REELS spectra for droplets deposited on a substrate. The energy of InxGa1-x bulk plasmon experimentally obtained and semi-empirically modelled allows to calculate from REELS the indium-gallium composition in the droplet. Comparison between these values obtained by both XPS and REELS provides information about In/Ga mixing to grow binary InxGa1-x nanodroplets. Their good agreement shows promising results for the growth of InxGa1-xN quantum dots by droplet epitaxy for a very large range of composition.
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hal-04880162 , version 1 (10-01-2025)

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  • HAL Id : hal-04880162 , version 1

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Romain Jouanneaud, G. Monier, Luc Bideux, Nicolas Pauly, Christine Robert-Goumet. In situ determination of indium/gallium composition in InxGa1-x nanodroplets on GaAs(111)A based on the complementarity between XPS and REELS. Applied Surface Science, 2025. ⟨hal-04880162⟩
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